2168-6734

IEEE Journal of the Electron Devices Society

Institute of Electrical and Electronics Engineers

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DOIs for this ISSN

Showing the top 5 of 1924 DOIs, ordered by correction priority.

# Title Missing Priority Citations
1 Tunnel Field-Effect Transistors: State-of-the-Art (10.1109/jeds.2014.2326622)
Abstract ORCID
138.69 593
2 Tunnel Field-Effect Transistors: Prospects and Challenges (10.1109/jeds.2015.2390591)
Abstract ORCID
134.55 490
3 A Review of the Pinned Photodiode for CCD and CMOS Image Sen… (10.1109/jeds.2014.2306412)
Abstract ORCID
129.66 391
4 Controlling Ambipolar Current in Tunneling FETs Using Overla… (10.1109/jeds.2014.2327626)
Abstract ORCID
124.64 310
5 A Review of Sharp-Switching Devices for Ultra-Low Power Appl… (10.1109/jeds.2016.2545978)
Abstract ORCID
107.46 140
6 Two-Dimensional Heterojunction Interlayer Tunneling Field Ef… (10.1109/jeds.2015.2390643)
Abstract ORCID
103.41 116
7 Characterization and Analysis of On-Chip Microwave Passive C… (10.1109/jeds.2020.2986722)
Abstract ORCID
99.34 96
8 Best Practices for Compact Modeling in Verilog-A (10.1109/jeds.2015.2455342)
Abstract ORCID
98.89 94
9 Semiconductor Logic Technology Innovation to Achieve Sub-10… (10.1109/jeds.2013.2271582)
Abstract ORCID
97.95 90
10 Modeling the Performance of Single-Bit and Multi-Bit Quanta… (10.1109/jeds.2013.2284054)
Abstract ORCID
97.95 90
11 Realizing Efficient Volume Depletion in SOI Junctionless FET… (10.1109/jeds.2016.2532965)
Abstract ORCID
97.47 88
12 Carbon Nanotube FET Technology for Radio-Frequency Electroni… (10.1109/jeds.2013.2244641)
Abstract ORCID
96.47 84
13 Strained Si and SiGe Nanowire Tunnel FETs for Logic and Anal… (10.1109/jeds.2015.2400371)
Abstract ORCID
95.95 82
14 Monolayer Transition Metal Dichalcogenide Channel-Based Tunn… (10.1109/jeds.2013.2292799)
Abstract ORCID
95.15 79
15 Impact of TFET Unidirectionality and Ambipolarity on the Per… (10.1109/jeds.2015.2392793)
Abstract ORCID
94.60 77
16 A Time-of-Flight Range Image Sensor With Background Cancelin… (10.1109/jeds.2014.2382689)
Abstract ORCID
92.56 70
17 Ferroelectricity of HfZrO<sub>2</sub> in Energy… (10.1109/jeds.2015.2435492)
Abstract ORCID
90.98 65
18 Nanometer-Scale III-V MOSFETs (10.1109/jeds.2016.2571666)
Abstract ORCID
89.97 62
19 III-V Heterostructure Nanowire Tunnel FETs (10.1109/jeds.2015.2388811)
Abstract ORCID
89.27 60
20 Design and Fabrication of Fine-Pitch Pixelated-Addressed Mic… (10.1109/jeds.2016.2631220)
Abstract ORCID
88.54 58
21 Making Solar Cells a Reality in Every Home: Opportunities an… (10.1109/jeds.2013.2280887)
Abstract ORCID
88.17 57
22 Characterization of Quanta Image Sensor Pump-Gate Jots With… (10.1109/jeds.2015.2480767)
Abstract ORCID
86.21 52
23 GaN Schottky Barrier Diode With TiN Electrode for Microwave… (10.1109/jeds.2014.2346395)
Abstract ORCID
85.38 50
24 A Pump-Gate Jot Device With High Conversion Gain for a Quant… (10.1109/jeds.2015.2390491)
Abstract ORCID
84.95 49
25 Configurable Electrostatically Doped High Performance Bilaye… (10.1109/jeds.2016.2539919)
Abstract ORCID
82.66 44
26 SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode f… (10.1109/jeds.2020.3001211)
Abstract ORCID
82.66 44
27 Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced G… (10.1109/jeds.2013.2258072)
Abstract ORCID
81.67 42
28 1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET D… (10.1109/jeds.2014.2382759)
Abstract ORCID
81.67 42
29 On the Performance and Scaling of Symmetric Lateral Bipolar… (10.1109/jeds.2012.2233272)
Abstract ORCID
80.64 40
30 Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on S… (10.1109/jeds.2015.2388793)
Abstract ORCID
80.64 40
31 Source/Drain Doping Effects and Performance Analysis of Ball… (10.1109/jeds.2014.2363389)
Abstract ORCID
80.10 39
32 Strain-Engineered Biaxial Tensile Epitaxial Germanium for Hi… (10.1109/jeds.2015.2394743)
Abstract ORCID
80.10 39
33 Impact of Channel Thickness Variation on Bandstructure and S… (10.1109/jeds.2016.2522981)
Abstract ORCID
79.55 38
34 Introduction of WO<sub>3</sub> Layer in a Cu-Based Al<sub>2<… (10.1109/jeds.2016.2526632)
Abstract ORCID
77.82 35
35 TFET-Based Power Management Circuit for RF Energy Harvesting (10.1109/jeds.2016.2619908)
Abstract ORCID
77.82 35
36 An Improved Model for the Full Well Capacity in Pinned Photo… (10.1109/jeds.2015.2423233)
Abstract ORCID
77.20 34
37 4H-SiC N-Channel JFET for Operation in High-Temperature Envi… (10.1109/jeds.2014.2355132)
Abstract ORCID
75.93 32
38 Graphene for Electron Devices: The Panorama of a Decade (10.1109/jeds.2014.2328032)
Abstract ORCID
74.57 30
39 Impact of Super-Linear Onset, Off-Region Due to Uni-Directio… (10.1109/jeds.2014.2377576)
Abstract ORCID
73.86 29
40 Characteristics of Gate-All-Around Junctionless Polysilicon… (10.1109/jeds.2015.2441736)
Abstract ORCID
73.86 29
41 Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A… (10.1109/jeds.2016.2590580)
Abstract ORCID
73.86 29
42 Determining Conversion Gain and Read Noise Using a Photon-Co… (10.1109/jeds.2016.2536719)
Abstract ORCID
73.12 28
43 Junctionless Silicon Nanowire Resonator (10.1109/jeds.2013.2295246)
Abstract ORCID
71.57 26
44 Compact Modeling of Flicker Noise in HEMTs (10.1109/jeds.2014.2347991)
Abstract ORCID
71.57 26
45 Exploiting Hetero-Junctions to Improve the Performance of II… (10.1109/jeds.2015.2395719)
Abstract ORCID
71.57 26
46 A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With… (10.1109/jeds.2020.3001002)
Abstract References ORCID
71.57 8
47 Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 150… (10.1109/jeds.2014.2330737)
Abstract ORCID
70.75 25
48 Exploring the Design Space for Crossbar Arrays Built With Mi… (10.1109/jeds.2015.2442242)
Abstract ORCID
70.75 25
49 Analytical Modeling and Experimental Validation of Threshold… (10.1109/jeds.2015.2415584)
Abstract ORCID
69.90 24
50 X-Band Compatible Flexible Microwave Inductors and Capacitor… (10.1109/jeds.2015.2446957)
Abstract ORCID
69.01 23