2772-3704

Power Electronic Devices and Components

Elsevier

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DOIs for this ISSN

Showing the top 5 of 143 DOIs, ordered by correction priority.

# Title Missing Priority Citations
1 The state-of-the-art of power electronics converters configu… (10.1016/j.pedc.2021.100001)
Abstract ORCID
101.87 108
2 Advantages of the extended finite element method for the ana… (10.1016/j.pedc.2022.100027)
Abstract ORCID
62.76 17
3 Investigation on safe-operating-area degradation and failure… (10.1016/j.pedc.2022.100026)
Abstract ORCID
57.31 13
4 Performance limits of high voltage press-pack SiC IGBT and S… (10.1016/j.pedc.2022.100019)
Abstract ORCID
53.96 11
5 A detailed study of <mml:math xmlns:mml="http://www.w3.org/1… (10.1016/j.pedc.2022.100006)
Abstract ORCID
47.71 8
6 Numerical study of 2DEG carrier density of quaternary AlInGa… (10.1016/j.pedc.2025.100078)
Abstract ORCID
47.71 8
7 Printed circuit board embedded power semiconductors: A techn… (10.1016/j.pedc.2022.100017)
Abstract
41.57 45
8 Reliability Behavior of A Resin-Free Nanosilver Paste at Ult… (10.1016/j.pedc.2022.100014)
Abstract ORCID
38.91 5
9 ICeGaNTM technology: The easy-to-use and self-protected GaN… (10.1016/j.pedc.2022.100028)
Abstract ORCID
38.91 5
10 Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ pow… (10.1016/j.pedc.2023.100037)
Abstract ORCID
38.91 5
11 Power electronic devices and components, the heart of energy… (10.1016/j.pedc.2021.100003)
Abstract References ORCID
35.78 2
12 Zero-ventilated self-cooled induction heating device: Topolo… (10.1016/j.pedc.2022.100013)
Abstract ORCID
34.95 4
13 Characteristics comparison of SiC and Si drift step recovery… (10.1016/j.pedc.2023.100042)
Abstract ORCID
34.95 4
14 Quality assessment and lifetime prediction of base metal ele… (10.1016/j.pedc.2023.100045)
Abstract
30.76 16
15 Machine learning-based prediction of on-state voltage for re… (10.1016/j.pedc.2023.100049)
Abstract
30.76 16
16 Life-cycle energy demand comparison of medium voltage Silico… (10.1016/j.pedc.2023.100050)
Abstract
30.10 15
17 Layer-by-layer printable nano-scale polypropylene for precis… (10.1016/j.pedc.2022.100025)
Abstract
29.40 14
18 Growth of p-type GaN – The role of oxygen in activation of M… (10.1016/j.pedc.2023.100036)
Abstract
29.40 14
19 Si-IGBT and SiC-MOSFET hybrid switch-based 1.7 kV half-bridg… (10.1016/j.pedc.2022.100020)
Abstract
28.65 13
20 Coupled thermal-mechanical analysis of power electronic modu… (10.1016/j.pedc.2024.100063)
Abstract
28.65 13
21 Surface discharge characteristics of silicone gel and DBC un… (10.1016/j.pedc.2022.100021)
Abstract
27.85 12
22 Advanced voltage balancing techniques for series-connected S… (10.1016/j.pedc.2023.100055)
Abstract
26.98 11
23 Impact of post-deposition anneal on ALD Al2O3/etched GaN int… (10.1016/j.pedc.2023.100033)
Abstract
26.03 10
24 Unleashing the power: Superior properties of fluorographene-… (10.1016/j.pedc.2024.100058)
Abstract
26.03 10
25 Lifetime modeling of solder joints based on accelerated mech… (10.1016/j.pedc.2023.100034)
Abstract
25.00 9
26 Choice of control function in magnetically-coupled full brid… (10.1016/j.pedc.2022.100005)
Abstract
23.86 8
27 Power-cycling degradation monitoring of an IGBT module with… (10.1016/j.pedc.2024.100061)
Abstract
23.86 8
28 Review on Modeling and Mitigation of Bipolar Degradation in… (10.1016/j.pedc.2024.100062)
Abstract
23.86 8
29 Dynamic characteristics of neutral beam etching enabled norm… (10.1016/j.pedc.2025.100087)
Abstract ORCID
23.86 2
30 Impact of voids on the solder joint integrity and fatigue li… (10.1016/j.pedc.2025.100098)
Abstract
23.86 8
31 Optimization of linear cell 4H-SiC power JBSFETs: Impact of… (10.1016/j.pedc.2022.100008)
Abstract
22.58 7
32 Maximum Peak Current and Junction-to-ambient Delta-temperatu… (10.1016/j.pedc.2023.100035)
Abstract
22.58 7
33 Estimation of remaining useful lifetime of power electronic… (10.1016/j.pedc.2023.100040)
Abstract
22.58 7
34 Assembly technology of electronic components for e-textiles (10.1016/j.pedc.2024.100056)
Abstract
22.58 7
35 Mitigating reverse recovery power losses in MOSFET switching… (10.1016/j.pedc.2024.100066)
Abstract
22.58 7
36 Comparison of GaN Enhancement Mode Transistor Performance Wi… (10.1016/j.pedc.2022.100004)
Abstract
21.13 6
37 Research on Long-term Reliability of Silver Sintered Press-P… (10.1016/j.pedc.2022.100012)
Abstract
21.13 6
38 A self-powered H-Bridge joule theory circuit for piezoelectr… (10.1016/j.pedc.2022.100015)
Abstract
21.13 6
39 Assessment and improvement of adhesion of printed silver-bas… (10.1016/j.pedc.2024.100067)
Abstract
21.13 6
40 Projecting GaN HEMTs lifetimes under typical stresses common… (10.1016/j.pedc.2023.100051)
Abstract
19.45 5
41 Bond wire lift-off detection by gate voltage waveform in IGB… (10.1016/j.pedc.2023.100052)
Abstract
19.45 5
42 50 nm DrGaN in 3D monolithic GaN MOSHEMT and Silicon PMOS pr… (10.1016/j.pedc.2024.100074)
Abstract
19.45 5
43 Impact of gamma-ray irradiation on commercial silicon carbid… (10.1016/j.pedc.2025.100077)
Abstract
19.45 5
44 Non‐ideal behavior of ZVS inverter comprising variable and f… (10.1016/j.pedc.2022.100007)
Abstract
17.47 4
45 Hybrid model to evaluate the frequency-dependent leakage ind… (10.1016/j.pedc.2023.100038)
Abstract
17.47 4
46 TCAD analysis of the high-temperature reverse-bias stress on… (10.1016/j.pedc.2025.100080)
Abstract
17.47 4
47 Design and performance evaluation of low-voltage solid-state… (10.1016/j.pedc.2025.100095)
Abstract
17.47 4
48 Embedded spectroscopy: Potentialities and constraints for on… (10.1016/j.pedc.2025.100118)
Abstract
17.47 4
49 Switching waveform design with gate charge control for power… (10.1016/j.pedc.2022.100018)
Abstract
15.05 3
50 Thick gate oxide extrinsic breakdown – The potential role of… (10.1016/j.pedc.2022.100024)
Abstract
15.05 3